WPM2031 single p-channel, -20v, -0.65a, power mosfet descriptions the WPM2031 is p-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WPM2031 is pb-free and halogen-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-723 applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging sot-723 pin configuration (top view) 1* 1 =device code * = month(a~z) marking order information device package shipping WPM2031-3/tr sot-723 8000/reel&tape v ds (v) rds(on) ( ? ) 0.495@ v gs = C 4.5v 0.665@ v gs = C 2.5v -20 0.882@ v gs = C 1.8v esd protected d 3 1 2 g s 3 2 1 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds -20 gate-source voltage v gs 5 v t a =25c -0.65 -0.60 continuous drain current a t a =70c i d -0.52 -0.48 a t a =25c 0.42 0.36 maximum power dissipation a t a =70c p d 0.27 0.23 w t a =25c -0.55 -0.51 continuous drain current b t a =70c i d -0.44 -0.41 a t a =25c 0.30 0.26 maximum power dissipation b t a =70c p d 0.19 0.17 w pulsed drain current c i dm -1.0 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 10 s 280 340 junction-to-ambient thermal resistance a steady state r ja 345 410 t 10 s 400 470 junction-to-ambient thermal resistance b steady state r ja 245 280 junction-to-case thermal resistance steady state r jc 280 340 c/w a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board using minimum pad size, 1oz copper c pulse width<380s, duty cycle<2% d maximum junction temperature t j =150c. WPM2031 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = -250ua -20 v zero gate voltage drain current i dss v ds =-16v, v gs = 0v -1 ua gate-to-source leakage current i gss v ds = 0 v, v gs = 5v 5 ua on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = -250ua -0.44 -0.65 -0.81 v v gs = -4.5v, i d = -0.45a 495 853 v gs = -2.5v, i d = -0.35a 665 1053 drain-to-source on-resistance b, c r ds(on) v gs = -1.8v, i d = -0.25a 882 1303 m ? forward transconductance g fs v ds = -5 v, i d =-0.45a 1.25 s capacitances, charges input capacitance c iss 74.5 output capacitance c oss 10.8 reverse transfer capacitance c rss v gs = 0 v, f = 100 khz, v ds = -10 v 10.2 pf total gate charge q g(tot) 1.67 threshold gate charge q g(th) 0.17 gate-to-source charge q gs 0.30 gate-to-drain charge q gd v gs = -4.5 v, v ds = -10 v, i d = -0.45a 0.59 nc switching characteristics turn-on delay time td(on) 0.50 rise time tr 1.76 turn-off delay time td(off) 7.0 fall time tf v gs = -4.5 v, v ds = -10 v, i d =-0.45a r g =6 ? 8.5 us body diode characteristics forward voltage v sd v gs = 0 v, i s = -0.15a -0.75 -1.5 v WPM2031 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) 012345 0.0 0.5 1.0 1.5 2.0 v gs = -2.5 ~ -5v output characteristics on-resistance vs. drain current on-resistance vs. drain current on-resistance vs. junction temperature on-resistance vs. junction temperature transfer characteristics transfer characteristics on-resistance vs. gate-to-source voltage on-resistance vs. gate-to-source voltage threshold voltage vs. temperature threshold voltage vs. temperature v gs = -2.0v v gs = -1.5v -i ds _drain to source current (a) -v ds _drain to source voltage (v) 0.0 0.3 0.6 .9 1.2 1.5 1.8 0 300 600 900 1200 1500 0 t=-50 0 c t=125 0 c v ds = -5v -i ds - drain current (a) -v gs - gate to drain voltage (v) t=25 0 c 0.2 0.4 0.6 0.8 1.0 200 400 600 800 1000 v gs =-2.5v v gs =-4.5v r ds(on) - on-resistance(m ) - i ds -drain-to-source current ( a ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 300 600 900 1200 1500 i d =-0.45a r ds(on) - on-resistance (m ) - v gs -gate-to-source voltage(v) -50 0 100 150 300 400 500 600 700 50 v gs =-4.5v i ds =-0.45a r ds(on) - on-resistance (m ) temperature ( 0 c) -25 0 25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i ds = -250ua -v gs(th) - threshold voltage (v) temperature ( 0 c) WPM2031 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance gate charge characteristics 0.4 0.5 0.6 0.7 0.8 0.9 50 100 150 200 250 t=25 0 c body diode forward voltage safe operating power transient thermal response (junction-to-ambient) 0.0 0.2 0.4 0.6 0.8 1 .0 1.2 1.4 1.6 1.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v =-10v,i =-0.45a ds d -v gs gate to source voltage(v) - qg (nc) t=125 0 c -i sd - source to drain current (a) -v sd - source to drain voltage(v) 0246810 0 30 60 90 120 v gs =0v f=100khz c-capacitance (pf) -v ds - drain to source voltage (v) cin cout crss -v ds - drain-to-source voltage (v) 10 0.1 0.1 1 10 100 0.001 1 - drain current (a) -i d 0.01 t a = 25 c single pulse 10 ms 100 ms dc 1 s 10 s limited by r ds(on) 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 345 WPM2031 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot-723 dimensions in millimeter symbol min. max. a 0.500 a1 0.000 0.050 b 0.170 0.270 b1 0.270 0.370 c 0.150 d 1.150 1.250 e 1.150 1.250 e1 0.750 0.850 e 0.800typ 7 ref WPM2031 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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